i3 Integral SensorWafer for Implant
Advanced technology nodes require more precise wafer-level process control during implant processes. Plasma implanters are unable to control all plasma parameters, such as wafer temperature, which affect dose uniformity and profile. Current methods such as temp dots are incapable of measuring the wafer level effects of plasma variations and are not representative of the spatial distribution of temperature and plasma effects. Integral SensorWafers provide a unique way to capture the effect of the process environment on production wafers and allow you to obtain accurate temperature profiles with full wafer spatial resolution monitoring.
SensorWafer characterization of the PLAD implant process reveals large thermal profile differences between two chambers running the same process.
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