With the Process Probe 1530, you get an ideal solution for characterizing and fine-tuning your process conditions to improve equipment performance, wafer quality, and yield.

The Process Probe 1530 is designed for use in temperatures ranging from 0°C to 1100°C, and for a wide range of applications including cold wall, RTP, sputtering, CVD, plasma strippers, and Epitaxial reactors. Our specially patented ThermaBond technique is utilized to ceramically bond the deeply immersed thermocouple into a re-entrant cavity in the silicon to improve heat transfer and bond strength. Measure wafer temperatures directly, in real time, during each critical step of your process cycle.

Optimize temperature controller parameters, improve uniformity in multi-zone heaters, and determine wafer temperature stabilization times.