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MCVD/MOCVD

 

1530

Process Probe 1530

1530 icon

  • Determine wafer and chuck delta T
  • Optimize deposition temperature and uniformit

 

At SensArray, we pride ourselves on matching the right product with any system.

With the Process Probe 1530, you get an ideal solution for characterizing and fine-tuning your process conditions to improve equipment performance, wafer quality, and yield.

The Process Probe 1530 is designed for use in temperatures ranging from 0°C to 1100°C, and for a wide range of applications including cold wall, RTP, sputtering, CVD, plasma strippers, and Epitaxial reactors. Our specially patented ThermaBond technique is utilized to ceramically bond the deeply immersed thermocouple into a re-entrant cavity in the silicon to improve heat transfer and bond strength. Measure wafer temperatures directly, in real time, during each critical step of your process cycle.

Optimize temperature controller parameters, improve uniformity in multi-zone heaters, and determine wafer temperature stabilization times.

 

Other Processes Supported
1530 PVD
MCVD/MOCVD
  EPI
  PECVD
  LPCVD/SACVD
  SOD